PART |
Description |
Maker |
H5PS2562GFRG7C H5PS2562GFRS5C H5PS2562GFRS5I H5PS2 |
256Mb DDR2 SDRAM
|
Hynix Semiconductor
|
K4T56043QFNBSP K4T56083QFNBSP K4T56083QF K4T56083Q |
256Mb F-die DDR2 SDRAM
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
EBE25RC8AAFA-4C-E EBE25RC8AAFA-5C-E EBE25RC8AAFA-4 |
256MB Registered DDR2 SDRAM DIMM 256MB Registered DDR2 SDRAM DIMM
|
Elpida Memory
|
EDE1104ABSE-5C-E EDE1108ABSE-5C-E EDE1116ABSE-5C-E |
1G bits DDR2 SDRAM 128M X 8 DDR DRAM, 0.45 ns, PBGA68 1G bits DDR2 SDRAM 128M X 8 DDR DRAM, 0.6 ns, PBGA68 1G bits DDR2 SDRAM 64M X 16 DDR DRAM, 0.45 ns, PBGA92 1G bits DDR2 SDRAM 256M X 4 DDR DRAM, 0.5 ns, PBGA68 1G bits DDR2 SDRAM 1克位DDR2 SDRAM内存
|
Elpida Memory, Inc.
|
HYS72V32301GR-7.5 HYS72V64300GR-7.5 HYS72V16300GR- |
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块) 3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块) 3.3V 1GB SDRAM Module(3.3V 1GSDRAM 模块) 3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块) 3.3 256MB的内存模块(3.3 256M位内存模块) 3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块) 3.3 128MB的内存模块(3.3V28兆位内存模块
|
SIEMENS AG
|
HY5PS56821LF-C4 HY5PS56821LF-C5 HY5PS56821LF-E3 HY |
256Mb DDR2 SDRAM 64M X 4 DDR DRAM, PBGA60 16M X 16 DDR DRAM, PBGA84
|
HYNIX SEMICONDUCTOR INC
|
HYS64V32220GDL-8 HYS64V16200GDL HYS64V16200GDL-7 H |
144 pin SO-DIMM SDRAM Modules 144引脚SO - DIMM内存模块 144 pin SO-DIMM SDRAM Modules 144引脚的SO - DIMM内存模块 256MB PC100 (2-2-2) 2-bank End-of-Life SDRAM|16MX64|CMOS|DIMM|144PIN|PLASTIC SDRAM Modules - 128MB PC133 (3-3-3) 1-bank; End-of-Life SDRAM Modules - 256MB PC133 (3-3-3) 2-bank; End-of-Life SDRAM Modules - 128MB PC133 (2-2-2) 1-bank; End-of-Life SDRAM Modules - 256MB PC133 (2-2-2) 2-bank; End-of-Life 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
AT91SAM9G45PRE |
DDR2 Controller 4-bank DDR2/LPDDR, SDRAM/LPSDR
|
ATMEL Corporation
|
K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片(了x4,x8 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125 256Mb E-die DDR SDRAM Specification 66 TSOP-II Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYB25D256400BC-6 HYB25D256400BC-7 HYB25D256400BT-7 |
DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR333 (2.5-3-3) DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR266A (2-3-3) DDR SDRAM Components - 256Mbit (64Mx4) DDR266A (2-3-3) DDR SDRAM Components - 256Mb (16Mx16) FBGA DDR333 (2.5-3-3) DDR SDRAM Components - 256Mb (16Mx16) FBGA DDR266A (2-3-3) DDR SDRAM Components - 256Mbit (16Mx16) DDR333 (2.5-3-3) DDR SDRAM Components - 256Mbit (16Mx16) DDR266A (2-3-3) DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR333 (2.5-3-3) DDR SDRAM Components - 256Mbit (32Mx8) DDR333 (2.5-3-3) DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR266A (2-3-3) DDR SDRAM Components - 256Mb (62Mx4) DDR266 (2-2-2)
|
Infineon
|